Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology CT16G4SFS832A.M8FE 16GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology CT16G4SFS832A.M8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.M8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 49

左右 -32% 更低的延时
更快的读取速度，GB/s

12.7 10.2

测试中的平均数值
更快的写入速度，GB/s

11.7 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 37
读取速度，GB/s

10.2 12.7
写入速度，GB/s

8.1 11.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2465 2734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-2400C11-8GSR 8GB

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Kingston 9905295-037.A00LF 2GB

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Kingston 99U5584-005.A00LF 4GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK16GX4M2B3333C16 8GB

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Kllisre KRE-D3U1600M/8G 8GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9905624-016.A00G 8GB

Kingston 9905624-016.A00G 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMK16GX4M1C3000C16 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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