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Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB

Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology CT32G4SFD8266.C16FB 32GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
Crucial Technology CT32G4SFD8266.C16FB 32GB 需要考虑的原因
Crucial Technology CT32G4SFD8266.C16FB 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 49
    左右 -36% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 36
  • 读取速度，GB/s
    10.2 left arrow 15.7
  • 写入速度，GB/s
    8.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 3032

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Crucial Technology CT32G4SFD8266.C16FB 32GB RAM的比较

Crucial Technology CB8GS2400.C8D 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Corsair CM4B8G1J2800K14K 8GB
Corsair CM4B8G1J2800K14K 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston KHX2400C15D4/8G 8GB
Kingston KHX2400C15D4/8G 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston CBD24D4S7D8MA-16 16GB
Kingston CBD24D4S7D8MA-16 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KF3000C16D4/32GX 32GB
Kingston KF3000C16D4/32GX 32GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK64GX4M4C3200C16 16GB
Corsair CMK64GX4M4C3200C16 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
内存RAM