Samsung M393B1G70BH0-YK0 8GB vs G Skill Intl F4-2400C17-8GDBVR 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

G Skill Intl F4-2400C17-8GDBVR 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GDBVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更快的读取速度，GB/s

18.3 10.2

测试中的平均数值
更快的写入速度，GB/s

12.5 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

10.2 18.3
写入速度，GB/s

8.1 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

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Team Group Inc. UD5-6400 16GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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G Skill Intl F4-3200C16-16GTZSW 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3600C18-32GTZN 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB