Samsung M393B1G70BH0-YK0 8GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

G Skill Intl F4-3466C18-8GTZRXB 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 49

左右 -188% 更低的延时
更快的读取速度，GB/s

20.9 10.2

测试中的平均数值
更快的写入速度，GB/s

16.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 17
读取速度，GB/s

10.2 20.9
写入速度，GB/s

8.1 16.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 9905700-013.A00G 8GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Corsair CMW64GX4M4C3466C16 16GB

Corsair CMW64GX4M4C3466C16 16GB