Samsung M393B1G70BH0-YK0 8GB vs Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更快的读取速度，GB/s

16.9 10.2

测试中的平均数值
更快的写入速度，GB/s

13.2 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

10.2 16.9
写入速度，GB/s

8.1 13.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3866C18-4GTZ 4GB

G Skill Intl F4-3866C18-4GTZ 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston KHX2400C14S4/8G 8GB

Kingston KHX2400C14S4/8G 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB

Crucial Technology BL51264BA160A.16FH 4GB

Crucial Technology BL51264BA160A.16FH 4GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK32GX4M2B3466C16 16GB

Corsair CMK32GX4M2B3466C16 16GB