Samsung M393B1G70BH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Samsung M393B1G70BH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

更快的读取速度，GB/s

10.2 8.8

测试中的平均数值
更快的写入速度，GB/s

8.1 5.0

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 49

左右 -32% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 37
读取速度，GB/s

10.2 8.8
写入速度，GB/s

8.1 5.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GRS 8GB

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Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Samsung M4 70T2864QZ3-CF7 1GB

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Patriot Memory (PDP Systems) PSD44G266641 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Apacer Technology 78.C2GF2.AU00B 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMK16GX4M4B3866C18 4GB

Corsair CMK16GX4M4B3866C18 4GB