Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 16ATF2G64AZ-3G2J1 16GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Micron Technology 16ATF2G64AZ-3G2J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的读取速度，GB/s

16.8 10.2

测试中的平均数值
更快的写入速度，GB/s

14.3 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

10.2 16.8
写入速度，GB/s

8.1 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2465 3527

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C15-4GVR 4GB

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Corsair CMR32GX4M2C3333C16 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N

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