Samsung M393B1G70BH0-YK0 8GB vs Mushkin 99[2/7/4]204F 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 49

左右 -96% 更低的延时
更快的读取速度，GB/s

13.4 10.2

测试中的平均数值
更快的写入速度，GB/s

11.5 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 25
读取速度，GB/s

10.2 13.4
写入速度，GB/s

8.1 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM48GU88N21-FFFHM 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Team Group Inc. DDR4 2800 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

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Corsair CM4X4GF2400Z16K4 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMW32GX4M4D3600C16 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB