Samsung M393B1G70BH0-YK0 8GB vs Nanya Technology M471A5143EB1-CRC 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 79

左右 38% 更低的延时
更快的写入速度，GB/s

8.1 7.9

测试中的平均数值

Nanya Technology M471A5143EB1-CRC 4GB

需要考虑的原因
Nanya Technology M471A5143EB1-CRC 4GB

报告一个错误

更快的读取速度，GB/s

14.7 10.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Nanya Technology M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 79
读取速度，GB/s

10.2 14.7
写入速度，GB/s

8.1 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3333C16-8GVR 8GB

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Transcend Information TS512MSH64V4H 4GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Samsung M393B1G70BH0-YK0 8GB

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Apacer Technology GD2.1527WE.001 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

AMD R5316G1609U2K 8GB

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Patriot Memory (PDP Systems) PSD48G240082 8GB

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Essencore Limited IM44GU48N24-FFFHA0 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

G Skill Intl F3-2133C9-4GAB 4GB

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