RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB

Samsung M393B1G70BH0-YK0 8GB vs SK Hynix HMA81GU6DJR8N-VK 8GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
SK Hynix HMA81GU6DJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GU6DJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 49
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 35
  • 读取速度，GB/s
    10.2 left arrow 15.8
  • 写入速度，GB/s
    8.1 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 2927

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
Corsair CMY16GX3M2A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
内存RAM
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM