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Samsung M393B1G70BH0-YK0 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
比较
Samsung M393B1G70BH0-YK0 8GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
总分
Samsung M393B1G70BH0-YK0 8GB
总分
SK Hynix V-GeN D4H4GL26A8TL5 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
低于PassMark测试中的延时,ns
49
58
左右 16% 更低的延时
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL5 4GB
报告一个错误
更快的读取速度,GB/s
17.7
10.2
测试中的平均数值
更快的写入速度,GB/s
9.3
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
49
58
读取速度,GB/s
10.2
17.7
写入速度,GB/s
8.1
9.3
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
1968
Samsung M393B1G70BH0-YK0 8GB RAM的比较
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMW32GX4M2Z2933C16 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
Kingston KHX1600C9S3L/4G 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3600C17-8GVK 8GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HYMP125S64CP8-S6 2GB
G Skill Intl F4-3600C16-16GTZN 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]197F 8GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Kingston HP32D4U8S8HC-8XR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Panram International Corporation W4U2666P-8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C15-8GTRS 8GB
报告一个错误
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Bug description
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