Samsung M393B1G70BH0-YK0 8GB vs V-GEN D4H4GS24A8 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 94

左右 48% 更低的延时
更快的写入速度，GB/s

8.1 7.9

测试中的平均数值

V-GEN D4H4GS24A8 4GB

需要考虑的原因
V-GEN D4H4GS24A8 4GB

报告一个错误

更快的读取速度，GB/s

14.7 10.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

V-GEN D4H4GS24A8 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 94
读取速度，GB/s

10.2 14.7
写入速度，GB/s

8.1 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 1506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F4-3600C17-8GTRS 8GB

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Kingston 9965516-430.A00G 16GB

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Crucial Technology BL16G30C15U4W.M16FE1 16GB

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A-DATA Technology DDR2 800G 2GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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V-GEN D4H4GS24A8 4GB

Kingston 99U5428-018.A00LF 8GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

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Samsung M471A5244BB0-CRC 4GB

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Kingston 99U5584-005.A00LF 4GB

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Kingston 9905622-058.A00G 8GB

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Kingston 99U5474-038.A00LF 4GB

Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB