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Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB

Samsung M393B1G70QH0-YK0 8GB vs A-DATA Technology AO1E34RCSV1-BD7S 16GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 59
    左右 12% 更低的延时
A-DATA Technology AO1E34RCSV1-BD7S 16GB 需要考虑的原因
A-DATA Technology AO1E34RCSV1-BD7S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 59
  • 读取速度，GB/s
    9.8 left arrow 16.2
  • 写入速度，GB/s
    8.0 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 2727

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
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内存RAM
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMK128GX4M8B3333C16 16GB
Corsair CMK128GX4M8B3333C16 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
内存RAM
Corsair CM3B4G2C1600L9 4GB
Corsair CM3B4G2C1600L9 4GB
V-GEN D4H4GL30A8TS5 4GB
V-GEN D4H4GL30A8TS5 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
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takeMS International AG TMS2GB264D083805EV 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM