Samsung M393B1G70QH0-YK0 8GB vs Corsair CMK32GX4M4B3600C16 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Corsair CMK32GX4M4B3600C16 8GB

需要考虑的原因
Corsair CMK32GX4M4B3600C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 52

左右 -117% 更低的延时
更快的读取速度，GB/s

16.1 9.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Corsair CMK32GX4M4B3600C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 24
读取速度，GB/s

9.8 16.1
写入速度，GB/s

8.0 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 3087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3600C16-8GTZR 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Super Talent F26UB16GH 16GB

Super Talent F26UB16GH 16GB

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Kingston 9905403-090.A01LF 4GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB