Samsung M393B1G70QH0-YK0 8GB vs Corsair CMR16GX4M2Z2933C16 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMR16GX4M2Z2933C16 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 66

左右 21% 更低的延时

Corsair CMR16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z2933C16 8GB

报告一个错误

更快的读取速度，GB/s

17 9.8

测试中的平均数值
更快的写入速度，GB/s

8.5 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Corsair CMR16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 66
读取速度，GB/s

9.8 17.0
写入速度，GB/s

8.0 8.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2179 2063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

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Corsair CMX8GX3M2A2000C9 4GB

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Kingston KMKYF9-MID 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB