Samsung M393B1G70QH0-YK0 8GB vs Corsair CMR16GX4M2Z2933C16 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMR16GX4M2Z2933C16 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 66

左右 21% 更低的延时

Corsair CMR16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z2933C16 8GB

报告一个错误

更快的读取速度，GB/s

17 9.8

测试中的平均数值
更快的写入速度，GB/s

8.5 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Corsair CMR16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 66
读取速度，GB/s

9.8 17.0
写入速度，GB/s

8.0 8.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2179 2063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston KF552C40-16 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3600C19-8GSXWB 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Smart Modular SF4722G4CKHH6DFSDS 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMW32GX4M4Z2933C16 8GB

Corsair CMW32GX4M4Z2933C16 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB