Samsung M393B1G70QH0-YK0 8GB vs Crucial Technology BLS8G4D240FSA.M16FAD 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 52

左右 -37% 更低的延时
更快的读取速度，GB/s

14.7 9.8

测试中的平均数值
更快的写入速度，GB/s

11.4 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 38
读取速度，GB/s

9.8 14.7
写入速度，GB/s

8.0 11.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2179 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMK8GX4M2A2133C13 4GB

Corsair CMK8GX4M2A2133C13 4GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB