Samsung M393B1G70QH0-YK0 8GB vs Crucial Technology CB8GU2400.C8ET 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 58

左右 10% 更低的延时
更快的写入速度，GB/s

8.0 6.7

测试中的平均数值

Crucial Technology CB8GU2400.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GU2400.C8ET 8GB

报告一个错误

更快的读取速度，GB/s

13.8 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CB8GU2400.C8ET 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 58
读取速度，GB/s

9.8 13.8
写入速度，GB/s

8.0 6.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2179 1740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 9965525-058.A00LF 8GB

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G Skill Intl F4-3200C16-4GVK 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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G Skill Intl F4-2800C15-4GTZ 4GB

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G Skill Intl F4-3600C19-8GVSB 8GB

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Kingston 99P5474-037.A00LF 4GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Corsair CMU16GX4M2D3200C16 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB