Samsung M393B1G70QH0-YK0 8GB vs Crucial Technology CT8G4DFRA266.C8FP 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FP 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的读取速度，GB/s

16 9.8

测试中的平均数值
更快的写入速度，GB/s

14.3 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

9.8 16.0
写入速度，GB/s

8.0 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2179 3312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 9905471-006.A01LF 4GB

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Corsair CMK8GX4M2B3600C18 4GB

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Apacer Technology 78.BAGM6.40C0B 4GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Samsung M471B5273CH0-CH9 4GB

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Wilk Elektronik S.A. GX2133D464L15S/8G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB