Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-2400C15Z8GNT 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 69

左右 25% 更低的延时
更快的写入速度，GB/s

8.0 6.5

测试中的平均数值

G Skill Intl F4-2400C15Z8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C15Z8GNT 8GB

报告一个错误

更快的读取速度，GB/s

13.6 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 69
读取速度，GB/s

9.8 13.6
写入速度，GB/s

8.0 6.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 1598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-8GVRB 8GB

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Crucial Technology BLS4G4S240FSD.8FAR 4GB

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Kingston 99U5584-001.A00LF 4GB

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Corsair CMW32GX4M2C3000C15 16GB

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A-DATA Technology DDR4 3300 2OZ 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Kingston 9905584-016.A00LF 4GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3600C18-8GTZN 8GB

G Skill Intl F4-3600C18-8GTZN 8GB