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Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-2666C18-32GRS 32GB

Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-2666C18-32GRS 32GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-2666C18-32GRS 32GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
G Skill Intl F4-2666C18-32GRS 32GB 需要考虑的原因
G Skill Intl F4-2666C18-32GRS 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 52
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-2666C18-32GRS 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 39
  • 读取速度，GB/s
    9.8 left arrow 15.2
  • 写入速度，GB/s
    8.0 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 3027

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-2666C18-32GRS 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F4-3600C18-32GTRG 32GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMW32GX4M2C3000C15 16GB
Corsair CMW32GX4M2C3000C15 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM