Samsung M393B1G70QH0-YK0 8GB vs Kingston 9905700-012.A00G 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Kingston 9905700-012.A00G 8GB

Kingston 9905700-012.A00G 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Kingston 9905700-012.A00G 8GB

需要考虑的原因
Kingston 9905700-012.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 52

左右 -58% 更低的延时
更快的读取速度，GB/s

14 9.8

测试中的平均数值
更快的写入速度，GB/s

9.7 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Kingston 9905700-012.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 33
读取速度，GB/s

9.8 14.0
写入速度，GB/s

8.0 9.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2179 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ10UE8BAFA-AE-E 1GB

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G Skill Intl F4-3200C16-8GVS 8GB

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AMD AE34G1601U1 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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SK Hynix HMA81GU6DJR8N-WM 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

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Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Kingston 9905471-006.A00LF 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

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