Samsung M393B1G70QH0-YK0 8GB vs Kingston 9905700-053.A00G 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Kingston 9905700-053.A00G 8GB

需要考虑的原因
Kingston 9905700-053.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 52

左右 -27% 更低的延时
更快的读取速度，GB/s

13.8 9.8

测试中的平均数值
更快的写入速度，GB/s

10.0 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Kingston 9905700-053.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 41
读取速度，GB/s

9.8 13.8
写入速度，GB/s

8.0 10.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2179 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

G Skill Intl F5-6000J3636F16G 16GB

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Mushkin MRA4S293MMMF32G 32GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Kingston 9905700-053.A00G 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Kingston K531R8-MIN 4GB

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Corsair CMD16GX4M2B3600C18 8GB

Nanya Technology NT4GC64B8HG0NF-CG 4GB

Nanya Technology NT4GC64B8HG0NF-CG 4GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB