Samsung M393B1G70QH0-YK0 8GB vs Panram International Corporation PUD43000C164G2NJK 4GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Panram International Corporation PUD43000C164G2NJK 4GB

需要考虑的原因
Panram International Corporation PUD43000C164G2NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的读取速度，GB/s

15.9 9.8

测试中的平均数值
更快的写入速度，GB/s

11.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Panram International Corporation PUD43000C164G2NJK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

9.8 15.9
写入速度，GB/s

8.0 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 2494

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Maxsun MSD48G30Q3 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMSX16GX4M1A2666C18 16GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

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G Skill Intl F4-2400C15Z8GNT 8GB

Samsung M471B5173QH0-YK0 4GB

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Kingston 9905712-016.A00G 16GB

Kingston 9905712-016.A00G 16GB