Samsung M393B1K70CH0-CH9 8GB vs Apacer Technology 78.DAGRL.4050C 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Apacer Technology 78.DAGRL.4050C 16GB

Apacer Technology 78.DAGRL.4050C 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Apacer Technology 78.DAGRL.4050C 16GB

需要考虑的原因
Apacer Technology 78.DAGRL.4050C 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 44

左右 -100% 更低的延时
更快的读取速度，GB/s

17.7 11.2

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Apacer Technology 78.DAGRL.4050C 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 22
读取速度，GB/s

11.2 17.7
写入速度，GB/s

8.1 14.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 3392

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston KF2666C16D4/16G 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology BLS4G4D240FSA.8FBD 4GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT8G4DFS824A.M8FD 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Essencore Limited KD4AGU880-32A160X 16GB

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Kingston KHX1600C9D3/4G 4GB

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Kingston 9905630-063.A00G 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Transcend Information JM3200HSE-32G 32GB

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