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Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB

Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BL32G32C16U4B.M16FB1 32GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Crucial Technology BL32G32C16U4B.M16FB1 32GB 需要考虑的原因
Crucial Technology BL32G32C16U4B.M16FB1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 44
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 36
  • 读取速度，GB/s
    11.2 left arrow 17.0
  • 写入速度，GB/s
    8.1 left arrow 15.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 3562

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
Micron Technology 16KTF51264HZ-1G6M1 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Essencore Limited KD4AGU880-36A180C 16GB
Essencore Limited KD4AGU880-36A180C 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK32GX4M2B3333C16 16GB
Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information TS1GSH64V4B 8GB
Transcend Information TS1GSH64V4B 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Corsair CM4X16GE2666C16K2 16GB
Corsair CM4X16GE2666C16K2 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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Kingston KST-2133MHZ-4G 4GB
内存RAM