Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BL32G36C16U4BL.M16FB 32GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Crucial Technology BL32G36C16U4BL.M16FB 32GB

需要考虑的原因
Crucial Technology BL32G36C16U4BL.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的读取速度，GB/s

18.7 11.2

测试中的平均数值
更快的写入速度，GB/s

18.1 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

11.2 18.7
写入速度，GB/s

8.1 18.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 4164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905678-138.A00G 8GB

Kingston 9905678-138.A00G 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-4400C18-8GTZR 8GB

G Skill Intl F4-4400C18-8GTZR 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB