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Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB

Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BLS4G4D240FSB.8FBD2 4GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FBD2 4GB

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Crucial Technology BLS4G4D240FSB.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 44
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 31
  • 读取速度，GB/s
    11.2 left arrow 16.5
  • 写入速度，GB/s
    8.1 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2774

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Crucial Technology BLS4G4D240FSB.8FBD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Crucial Technology CT51264BD160B.C16F 4GB
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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SK Hynix HMA42GR7MFR4N-TFTD 16GB
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Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
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内存RAM
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内存RAM
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Samsung 1600 CL10 Series 8GB
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Corsair CMD16GX4M2B3000C15 8GB
内存RAM
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内存RAM
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内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Golden Empire CL16-16-16 D4-3200 4GB
内存RAM