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Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB

Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology CT8G4DFS8213.M8FB 8GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Crucial Technology CT8G4DFS8213.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 44
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 31
  • 读取速度，GB/s
    11.2 left arrow 15.2
  • 写入速度，GB/s
    8.1 left arrow 10.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2712

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Crucial Technology CT8G4DFS8213.M8FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
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Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
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JUHOR JHD2666U1908JG 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
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G Skill Intl F4-3200C16-8GTZRN 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Panram International Corporation PUD42133C154G2VS 4GB
内存RAM