Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-3600C16-16GTRS 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-3600C16-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的读取速度，GB/s

18 11.2

测试中的平均数值
更快的写入速度，GB/s

16.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C16-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

11.2 18.0
写入速度，GB/s

8.1 16.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16HTF25664AY-800G1 2GB

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A-DATA Technology VDQVE1B16 2GB

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Samsung M471A1K43BB1-CRC 8GB

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Kingston 99U5403-036.A00G 4GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

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Kingston 9905403-447.A00LF 4GB

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Kingston KHX3200C16D4/4GX 4GB

Kingston KHX3200C16D4/4GX 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Corsair VS1GB800D2 1GB

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Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMK16GX4M2B3466C16 8GB

Corsair CMK16GX4M2B3466C16 8GB