Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-4500C19-8GTZSWE 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-4500C19-8GTZSWE 8GB

需要考虑的原因
G Skill Intl F4-4500C19-8GTZSWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 44

左右 -214% 更低的延时
更快的读取速度，GB/s

25.1 11.2

测试中的平均数值
更快的写入速度，GB/s

19.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 14
读取速度，GB/s

11.2 25.1
写入速度，GB/s

8.1 19.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 4182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix V-GeN D4H8GL26A8TX5 8GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMR64GX4M8C3200C16 8GB

Corsair CMR64GX4M8C3200C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Gloway International (HK) STKD4GAM2400-F 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Corsair CM4B8G1J3000K16W4 8GB

Corsair CM4B8G1J3000K16W4 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M393B1K70CH0-CH9 8GB

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Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB