Samsung M393B1K70CH0-CH9 8GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Gloway International (HK) STK2400CL17SNB16GB 16GB

需要考虑的原因
Gloway International (HK) STK2400CL17SNB16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 44

左右 -91% 更低的延时
更快的读取速度，GB/s

17.5 11.2

测试中的平均数值
更快的写入速度，GB/s

13.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 23
读取速度，GB/s

11.2 17.5
写入速度，GB/s

8.1 13.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 3171

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351S6CFR8C-PB 4GB

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Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB