Samsung M393B1K70CH0-CH9 8GB vs Kingston KHX3333C16D4/8GX 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston KHX3333C16D4/8GX 8GB

Kingston KHX3333C16D4/8GX 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Kingston KHX3333C16D4/8GX 8GB

需要考虑的原因
Kingston KHX3333C16D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 -63% 更低的延时
更快的读取速度，GB/s

18.8 11.2

测试中的平均数值
更快的写入速度，GB/s

15.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston KHX3333C16D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 27
读取速度，GB/s

11.2 18.8
写入速度，GB/s

8.1 15.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 3651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Team Group Inc. TEAMGROUP-UD4-2400 8GB

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Mushkin 991586 2GB

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Crucial Technology CT8G4DFS8266.M8FE 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

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Kingston 99U5403-036.A00G 4GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB