Samsung M393B1K70CH0-CH9 8GB vs Micron Technology 16ATF2G64AZ-2G6D1 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Micron Technology 16ATF2G64AZ-2G6D1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

14.2 11.2

测试中的平均数值
更快的写入速度，GB/s

9.8 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

11.2 14.2
写入速度，GB/s

8.1 9.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 2890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT16G4DFD832A.M16FR 16GB

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Samsung M378B5673EH1-CF8 2GB

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Micron Technology 18ASF1G72PDZ-2G3A2 8GB

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G Skill Intl F4-4400C16-8GVK 8GB

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Crucial Technology BL16G26C16U4B.16FE 16GB

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SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

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Corsair CM2X1024-6400C4 1GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology 8G4US2400.M8B1 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Lenovo LMKUFG68AHFHD-32A 16GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB