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Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16G2666CL19 16GB

Samsung M393B1K70CH0-CH9 8GB vs Micron Technology 16G2666CL19 16GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Micron Technology 16G2666CL19 16GB 需要考虑的原因
Micron Technology 16G2666CL19 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 44
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16G2666CL19 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 24
  • 读取速度，GB/s
    11.2 left arrow 15.4
  • 写入速度，GB/s
    8.1 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2438

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Micron Technology 16G2666CL19 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905665-011.A00G 4GB
Kingston 9905665-011.A00G 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F3-14900CL10-8GBZL 8GB
G Skill Intl F3-14900CL10-8GBZL 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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G Skill Intl F4-2133C15-8GNT 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston 9905622-057.A00G 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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G Skill Intl F4-3200C15-16GVK 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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Samsung M471A1K43CB1-CRCR 8GB
内存RAM