Samsung M393B1K70CH0-CH9 8GB vs Micron Technology 9ASF51272AZ-2G3B1 4GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Micron Technology 9ASF51272AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 44

左右 -52% 更低的延时
更快的读取速度，GB/s

15.4 11.2

测试中的平均数值
更快的写入速度，GB/s

13.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 29
读取速度，GB/s

11.2 15.4
写入速度，GB/s

8.1 13.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Mushkin 99[2/7/4]192F 4GB

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Samsung M471B5173DB0-YK0 4GB

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Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Kingston 9965525-010.A00LF 4GB

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Corsair CMK32GX4M4B2800C14 8GB

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AMD R5316G1609U2K 8GB

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Golden Empire CL18-22-22 D4-3600 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingston KHX2133C13S4/4G 4GB

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Samsung M393B1K70CHD-CH9 8GB

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Kingston 9965525-018.A00LF 4GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB