Samsung M393B1K70CH0-CH9 8GB vs Panram International Corporation PUD42400C154G4NJK 4GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Panram International Corporation PUD42400C154G4NJK 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G4NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 44

左右 -110% 更低的延时
更快的读取速度，GB/s

18.4 11.2

测试中的平均数值
更快的写入速度，GB/s

12.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Panram International Corporation PUD42400C154G4NJK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 21
读取速度，GB/s

11.2 18.4
写入速度，GB/s

8.1 12.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 2980

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR16N11/8-SP 8GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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AMD R5S38G1601U2S 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

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Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB