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Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB

Samsung M393B1K70CH0-CH9 8GB vs SK Hynix HMAA4GS6MJR8N-VK 32GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
SK Hynix HMAA4GS6MJR8N-VK 32GB 需要考虑的原因
SK Hynix HMAA4GS6MJR8N-VK 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 44
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 36
  • 读取速度，GB/s
    11.2 left arrow 14.7
  • 写入速度，GB/s
    8.1 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2588

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

SK Hynix HMAA4GS6MJR8N-VK 32GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
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Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
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Crucial Technology BLS4G4D240FSB.8FARG 4GB
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A-DATA Technology VDQVE1B16 2GB
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InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
Samsung M378B5773DH0-CH9 2GB
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Essencore Limited KD48GU880-32A160T 8GB
内存RAM
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Corsair MK16GX44B3000C15 4GB
内存RAM
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G Skill Intl F4-4000C14-16GTZR 16GB
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Samsung M47472K43DB1-CTD 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMWX8GF2933Z16W4 8GB
Corsair CMWX8GF2933Z16W4 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
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Corsair CMD16GX4M4A2666C16 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Corsair CMK8GX4M2B4266C19 4GB
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