Samsung M393B1K70CH0-CH9 8GB vs Wilk Elektronik S.A. W-HK26S16G 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Wilk Elektronik S.A. W-HK26S16G 16GB

Wilk Elektronik S.A. W-HK26S16G 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Wilk Elektronik S.A. W-HK26S16G 16GB

需要考虑的原因
Wilk Elektronik S.A. W-HK26S16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 -63% 更低的延时
更快的读取速度，GB/s

17.6 11.2

测试中的平均数值
更快的写入速度，GB/s

13.6 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Wilk Elektronik S.A. W-HK26S16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 27
读取速度，GB/s

11.2 17.6
写入速度，GB/s

8.1 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

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Corsair CMG32GX4M2D3600C18 16GB

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G Skill Intl F3-10666CL9-2GBRL 2GB

G Skill Intl F3-10666CL9-2GBRL 2GB

Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

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G Skill Intl F4-3200C16-4GVRB 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

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Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB