Samsung M393B2G70BH0-CH9 16GB vs Corsair CMK16GX4M1B3000C15 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Corsair CMK16GX4M1B3000C15 16GB

Corsair CMK16GX4M1B3000C15 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Corsair CMK16GX4M1B3000C15 16GB

需要考虑的原因
Corsair CMK16GX4M1B3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 -14% 更低的延时
更快的读取速度，GB/s

17.1 8

测试中的平均数值
更快的写入速度，GB/s

13.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK16GX4M1B3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 29
读取速度，GB/s

8.0 17.1
写入速度，GB/s

7.3 13.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5S38G1601U2S 8GB

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Kingston 9965640-015.A00G 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Panram International Corporation D4N2400PS-8G 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Essencore Limited KD48GS88A-26N1600 8GB

Essencore Limited KD48GS88A-26N1600 8GB