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Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB

Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT16G4SFD824A.C16FJ 16GB

总分
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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 8% 更低的延时
Crucial Technology CT16G4SFD824A.C16FJ 16GB 需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FJ 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 36
  • 读取速度，GB/s
    8.0 left arrow 13.4
  • 写入速度，GB/s
    7.3 left arrow 11.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 2467

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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Kingston 9905678-023.A00G 8GB
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Corsair CMT32GX4M2Z3600C18 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Hewlett-Packard 7EH68AA# 16GB
Hewlett-Packard 7EH68AA# 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9965604-033.D00G 16GB
Kingston 9965604-033.D00G 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
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G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3000C15-16GVR 16GB
G Skill Intl F4-3000C15-16GVR 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM