Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT8G4DFRA266.C8FP 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FP 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FP 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 -10% 更低的延时
更快的读取速度，GB/s

16 8

测试中的平均数值
更快的写入速度，GB/s

14.3 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 30
读取速度，GB/s

8.0 16.0
写入速度，GB/s

7.3 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1911 3312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-16GVK 16GB

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Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

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Samsung M471B5674QH0-YK0 2GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Avexir Technologies Corporation T 4GB

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Corsair CM4X8GF2666C16K8 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

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Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB