Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT8G4SFD8213.M16FB 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Crucial Technology CT8G4SFD8213.M16FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.M16FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 -22% 更低的延时
更快的读取速度，GB/s

15.5 8

测试中的平均数值
更快的写入速度，GB/s

12.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 27
读取速度，GB/s

8.0 15.5
写入速度，GB/s

7.3 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2628

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Mushkin MR[A/B]4U266GHHF16G 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9905700-017.A00G 8GB

Kingston 9905700-017.A00G 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB

Essencore Limited IM44GU48N24-FFFHA0 4GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB