Samsung M393B2G70BH0-CH9 16GB vs Essencore Limited IM4AGU88N24-FFFHA0 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Essencore Limited IM4AGU88N24-FFFHA0 16GB

需要考虑的原因
Essencore Limited IM4AGU88N24-FFFHA0 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 33

左右 -50% 更低的延时
更快的读取速度，GB/s

16.1 8

测试中的平均数值
更快的写入速度，GB/s

8.1 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 22
读取速度，GB/s

8.0 16.1
写入速度，GB/s

7.3 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KHX3600C18D4/16GX 16GB

Kingston KHX3600C18D4/16GX 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB