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Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C16-16GRS 16GB

Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3200C16-16GRS 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
G Skill Intl F4-3200C16-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 33
    左右 -74% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C16-16GRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 19
  • 读取速度，GB/s
    8.0 left arrow 20.9
  • 写入速度，GB/s
    7.3 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3801

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

G Skill Intl F4-3200C16-16GRS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Crucial Technology RM51264BA1339.16FR 4GB
Crucial Technology RM51264BA1339.16FR 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3200C18D4/8G 8GB
Kingston KF3200C18D4/8G 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Crucial Technology BL32G32C16S4B.16FB 32GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Ramsta Ramsta-2400Mhz-8G 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA851U6AFR6N-UH 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
内存RAM