Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3200C22-16GRS 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 45

左右 27% 更低的延时

G Skill Intl F4-3200C22-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3200C22-16GRS 16GB

报告一个错误

更快的读取速度，GB/s

16.2 8

测试中的平均数值
更快的写入速度，GB/s

14.1 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3200C22-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 45
读取速度，GB/s

8.0 16.2
写入速度，GB/s

7.3 14.1
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 3027

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Teikon TMA851S6CJR6N-VKSC 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Corsair CMK128GX4M8A2666C16 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology BL8G30C15U4WL.M8FE1 8GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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A-DATA Technology DDR4 2666 8GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Samsung M471A1K1KCB1-CRC 8GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Kingston HP32D4U8S8HD-8X 8GB

Corsair CMK32GX5M2B5600C36 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N