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Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB

Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-4266C17-16GTRGB 16GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
G Skill Intl F4-4266C17-16GTRGB 16GB 需要考虑的原因
G Skill Intl F4-4266C17-16GTRGB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 33
    左右 -10% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 30
  • 读取速度，GB/s
    8.0 left arrow 15.7
  • 写入速度，GB/s
    7.3 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3495

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

G Skill Intl F4-4266C17-16GTRGB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMSX32GX4M2A3000C16 16GB
Corsair CMSX32GX4M2A3000C16 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMW64GX4M8C3466C16 8GB
Corsair CMW64GX4M8C3466C16 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM