Samsung M393B2G70BH0-CH9 16GB vs Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 33

左右 -3% 更低的延时
更快的读取速度，GB/s

17.3 8

测试中的平均数值
更快的写入速度，GB/s

14.3 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 32
读取速度，GB/s

8.0 17.3
写入速度，GB/s

7.3 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Avant Technology W641GU48J7240ND 8GB

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Kingston KHX3200C18D4/8G 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Kingston 99U5428-063.A00LF 8GB

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SK Hynix HMA81GS6AFR8N-VK 8GB

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Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB