Samsung M393B2G70BH0-CH9 16GB vs Kingston 9905678-029.A00G 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

更快的写入速度，GB/s

7.3 6.9

测试中的平均数值

Kingston 9905678-029.A00G 8GB

需要考虑的原因
Kingston 9905678-029.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 -32% 更低的延时
更快的读取速度，GB/s

12.6 8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905678-029.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 25
读取速度，GB/s

8.0 12.6
写入速度，GB/s

7.3 6.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1A43CB1-CRC 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905678-029.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 16ATF2G64HZ-2G3E1 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Mushkin MR[A/B]4U320LLLM16G 16GB

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMD32GX4M4C3466C16W 8GB

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Kingston 9905471-006.A00LF 4GB

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Crucial Technology CT16G4DFD824A.M16FD 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB