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Samsung M393B2G70BH0-CH9 16GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M393B2G70BH0-CH9 16GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 49
    左右 33% 更低的延时
Micron Technology 4ATF1G64HZ-3G2E2 8GB 需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 49
  • 读取速度，GB/s
    8.0 left arrow 15.8
  • 写入速度，GB/s
    7.3 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 2534

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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Corsair CMD16GX4M4B3000C15 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
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SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
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Unifosa Corporation HU564404EP0200 4GB
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Micron Technology HMA81GU6AFR8N-UH 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston 9905599-025.A00G 8GB
Kingston 9905599-025.A00G 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM