Samsung M393B2G70BH0-CH9 16GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 71

左右 54% 更低的延时

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

报告一个错误

更快的读取速度，GB/s

14.5 8

测试中的平均数值
更快的写入速度，GB/s

8.0 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 71
读取速度，GB/s

8.0 14.5
写入速度，GB/s

7.3 8.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1911 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMU32GX4M2C3000C15 16GB

Corsair CMU32GX4M2C3000C15 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK64GX4M2C3200C16 32GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CMW64GX4M8X3600C18 8GB

Corsair CMW64GX4M8X3600C18 8GB

AMD R5S38G1601U2S 8GB

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Essencore Limited KD48GU880-32A160T 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9965669-025.A00G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB